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BSC080N12LSGATMA1

BSC080N12LSGATMA1 Infineon Technologies

Infineon_BSC080N12LS_G_DataSheet_v02_01_EN-3360885.pdf Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
auf Bestellung 6655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.44 EUR
10+ 3.5 EUR
100+ 2.92 EUR
250+ 2.8 EUR
500+ 2.46 EUR
1000+ 2.01 EUR
5000+ 1.94 EUR
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Technische Details BSC080N12LSGATMA1 Infineon Technologies

Description: TRENCH >=100V PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 112µA, Supplier Device Package: PG-TDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V.

Weitere Produktangebote BSC080N12LSGATMA1 nach Preis ab 1.94 EUR bis 5.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC080N12LSGATMA1 BSC080N12LSGATMA1 Hersteller : Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.77 EUR
10+ 3.78 EUR
100+ 2.64 EUR
500+ 2.16 EUR
1000+ 2 EUR
2000+ 1.94 EUR
Mindestbestellmenge: 4
BSC080N12LSGATMA1 Hersteller : Infineon Technologies infineon-bsc080n12lsg-datasheet-v02_01-en.pdf JAM NUT RECEPTACLE
Produkt ist nicht verfügbar
BSC080N12LSGATMA1 BSC080N12LSGATMA1 Hersteller : Infineon Technologies Infineon-BSC080N12LS%20G-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7db46b007a Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Produkt ist nicht verfügbar