BSC074N15NS5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.67 EUR |
| 10+ | 6.44 EUR |
| 100+ | 5.21 EUR |
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Technische Details BSC074N15NS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 114A TSON-8-3, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 114A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 136µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V.
Weitere Produktangebote BSC074N15NS5ATMA1 nach Preis ab 4.36 EUR bis 8.45 EUR
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BSC074N15NS5ATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC074N15NS5ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 114A 8-Pin TSON EP T/R |
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BSC074N15NS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 114A TSON-8-3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 136µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V |
Produkt ist nicht verfügbar |