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BSC072N025SG


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Technische Details BSC072N025SG

Description: MOSFET N-CH 25V 15A/40A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 40A, 10V, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V.

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BSC072N025S G BSC072N025S G Hersteller : Infineon Technologies BSC072N025S_G.pdf Description: MOSFET N-CH 25V 15A/40A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
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