BSC060P03NS3EGATMA INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC060P03NS3EGATMA INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8, Mounting: SMD, Case: PG-TDSON-8, Drain-source voltage: -30V, Drain current: -100A, On-state resistance: 6mΩ, Type of transistor: P-MOSFET, Power dissipation: 83W, Polarisation: unipolar, Technology: OptiMOS™ P3, Kind of channel: enhanced, Gate-source voltage: ±25V, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote BSC060P03NS3EGATMA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
BSC060P03NS3EGATMA | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: -30V Drain current: -100A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±25V |
Produkt ist nicht verfügbar |