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BSC046N02KSGAUMA1

BSC046N02KSGAUMA1 Infineon Technologies

BSC046N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c34414001c Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
auf Bestellung 4973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.59 EUR
10+ 2.3 EUR
100+ 1.56 EUR
500+ 1.25 EUR
1000+ 1.15 EUR
2000+ 1.06 EUR
Mindestbestellmenge: 5
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Technische Details BSC046N02KSGAUMA1 Infineon Technologies

Description: MOSFET N-CH 20V 19A/80A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V.

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BSC046N02KSGAUMA1 BSC046N02KSGAUMA1 Hersteller : Infineon Technologies bsc046n02ksgrev1.0.pdf Trans MOSFET N-CH 20V 19A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC046N02KSGAUMA1 BSC046N02KSGAUMA1 Hersteller : Infineon Technologies BSC046N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c34414001c Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
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