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BSC042N03MSGATMA1

BSC042N03MSGATMA1 Infineon Technologies


3504bsc042n03msg_rev1.17.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.61 EUR
Mindestbestellmenge: 5000
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Technische Details BSC042N03MSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 17A/93A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V.

Weitere Produktangebote BSC042N03MSGATMA1 nach Preis ab 0.63 EUR bis 2.31 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies 3504bsc042n03msg_rev1.17.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+0.92 EUR
Mindestbestellmenge: 5000
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366 Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 4199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.31 EUR
13+ 1.45 EUR
100+ 0.96 EUR
500+ 0.75 EUR
1000+ 0.69 EUR
2000+ 0.63 EUR
Mindestbestellmenge: 8
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies 3504bsc042n03msg_rev1.17.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : INFINEON TECHNOLOGIES BSC042N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 82A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies 3504bsc042n03msg_rev1.17.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies 3504bsc042n03msg_rev1.17.pdffolderiddb3a304313d846880113d91d60c500c4f.pdf Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies Infineon-BSC042N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de62ba090366 Description: MOSFET N-CH 30V 17A/93A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Produkt ist nicht verfügbar
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : Infineon Technologies Infineon_BSC042N03MSG_DS_v02_01_en-3160430.pdf MOSFET TRENCH <= 40V
Produkt ist nicht verfügbar
BSC042N03MSGATMA1 BSC042N03MSGATMA1 Hersteller : INFINEON TECHNOLOGIES BSC042N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 82A; 57W; PG-TDSON-8
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 82A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar