Produkte > INFINEON TECHNOLOGIES > BSC037N08NS5TATMA1
BSC037N08NS5TATMA1

BSC037N08NS5TATMA1 Infineon Technologies

Infineon_BSC037N08NS5T_DataSheet_v02_02_EN-3360821.pdf Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 8163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.29 EUR
10+ 3.57 EUR
100+ 2.85 EUR
250+ 2.62 EUR
500+ 2.39 EUR
1000+ 2.08 EUR
5000+ 1.87 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details BSC037N08NS5TATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 22A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 72µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V.

Weitere Produktangebote BSC037N08NS5TATMA1 nach Preis ab 2.08 EUR bis 4.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Hersteller : Infineon Technologies Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.45 EUR
10+ 4.03 EUR
25+ 3.59 EUR
100+ 3.23 EUR
250+ 2.87 EUR
500+ 2.52 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 4
BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-BSC037N08NS5T-DataSheet-v02_02-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: ROCHESTER ELECTRONICS - BSC037N08NS5TATMA1 - BSC037N08NS5T OPTIMOS 5 POWER MOSFET 80
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4714 Stücke:
Lieferzeit 14-21 Tag (e)
BSC037N08NS5TATMA1 Hersteller : Infineon Technologies infineon-bsc037n08ns5t-datasheet-v02_02-en.pdf TRENCH 40<-<100V
Produkt ist nicht verfügbar
BSC037N08NS5TATMA1 BSC037N08NS5TATMA1 Hersteller : Infineon Technologies Infineon-BSC037N08NS5T-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bd24725382f23 Description: MOSFET N-CH 80V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Produkt ist nicht verfügbar