BSC034N03LSGATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.6 EUR |
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Technische Details BSC034N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V.
Weitere Produktangebote BSC034N03LSGATMA1 nach Preis ab 0.39 EUR bis 2.43 EUR
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 4350 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 4350 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 22A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC034N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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