BSC029N025SG Infineon Technologies
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
auf Bestellung 8868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
402+ | 1.32 EUR |
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Technische Details BSC029N025SG Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2V @ 80µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V.
Weitere Produktangebote BSC029N025SG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BSC029N025SG | Hersteller : infineon | 08+ |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC029N025S G | Hersteller : Infineon Technologies | Description: MOSFET N-CH 25V 100A TDSON-8 |
Produkt ist nicht verfügbar |
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BSC029N025S G | Hersteller : Infineon Technologies | Description: MOSFET N-CH 25V 100A TDSON-8 |
Produkt ist nicht verfügbar |
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BSC029N025S G | Hersteller : Infineon Technologies | Description: MOSFET N-CH 25V 100A TDSON-8 |
Produkt ist nicht verfügbar |