Produkte > INFINEON TECHNOLOGIES > BSC021N08NS5ATMA1
BSC021N08NS5ATMA1

BSC021N08NS5ATMA1 Infineon Technologies

Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e Hersteller: Infineon Technologies
Description: MOSFET TRENCH 80V TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.39 EUR
10+ 5.37 EUR
100+ 4.34 EUR
500+ 3.86 EUR
1000+ 3.3 EUR
2000+ 3.11 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details BSC021N08NS5ATMA1 Infineon Technologies

Description: MOSFET TRENCH 80V TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 146µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V.

Weitere Produktangebote BSC021N08NS5ATMA1 nach Preis ab 3.15 EUR bis 6.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 Hersteller : Infineon Technologies Infineon_BSC021N08NS5_DataSheet_v02_01_EN-3360552.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 3125 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl Preis ohne MwSt
1+6.42 EUR
10+ 5.42 EUR
25+ 5.35 EUR
100+ 4.38 EUR
250+ 4.36 EUR
500+ 3.89 EUR
1000+ 3.15 EUR
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 Hersteller : Infineon Technologies infineon-bsc021n08ns5-ds-v02_00-en.pdf Trans MOSFET N-CH 80V 100A 8-Pin TSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC021N08NS5-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0168c7cb2946643e Description: MOSFET TRENCH 80V TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Produkt ist nicht verfügbar