BSC010N04LSCATMA1 Infineon Technologies
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC010N04LSCATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 282A, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 282A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V.
Weitere Produktangebote BSC010N04LSCATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BSC010N04LSCATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 40V 39A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
||
BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 282A Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V |
Produkt ist nicht verfügbar |
||
BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 282A Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V |
Produkt ist nicht verfügbar |
||
BSC010N04LSCATMA1 | Hersteller : Infineon Technologies | MOSFETs TRENCH <= 40V |
Produkt ist nicht verfügbar |