![BS170P BS170P](https://static6.arrow.com/aropdfconversion/arrowimages/ddb5d043ee2f96b647ff97a062daf7b6e798ece0/to92.jpg)
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
221+ | 0.7 EUR |
500+ | 0.56 EUR |
1000+ | 0.46 EUR |
4000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BS170P Diodes Zetex
Description: MOSFET N-CH 60V 270MA TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V.
Weitere Produktangebote BS170P nach Preis ab 0.49 EUR bis 1.28 EUR
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BS170P | Hersteller : Diodes Zetex |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BS170P | Hersteller : Diodes Incorporated |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
auf Bestellung 7642 Stücke: Lieferzeit 10-14 Tag (e) |
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BS170P | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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BS170P | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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BS170P | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 3A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BS170P | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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BS170P | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.27A; Idm: 3A; 0.625W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 3A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced |
Produkt ist nicht verfügbar |