Produkte > ONSEMI > BFL4004-1E
BFL4004-1E

BFL4004-1E onsemi


BFL4004.pdf Hersteller: onsemi
Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
auf Bestellung 36832 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
208+2.39 EUR
Mindestbestellmenge: 208
Produktrezensionen
Produktbewertung abgeben

Technische Details BFL4004-1E onsemi

Description: MOSFET N-CH 800V 4.3A TO220F-3FS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V, Power Dissipation (Max): 2W (Ta), 36W (Tc), Supplier Device Package: TO-220F-3FS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V.

Weitere Produktangebote BFL4004-1E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BFL4004-1E BFL4004-1E Hersteller : ONSEMI ONSMS35943-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - BFL4004-1E - BFL4004-1E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 36832 Stücke:
Lieferzeit 14-21 Tag (e)
BFL4004-1E BFL4004-1E Hersteller : onsemi BFL4004.pdf Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Produkt ist nicht verfügbar