BFG410W,135 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 4.5V 22GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 54mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Description: RF TRANS NPN 4.5V 22GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 54mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
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Technische Details BFG410W,135 NXP USA Inc.
Description: RF TRANS NPN 4.5V 22GHZ CMPAK-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21dB, Power - Max: 54mW, Current - Collector (Ic) (Max): 12mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V, Frequency - Transition: 22GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz, Supplier Device Package: CMPAK-4, Part Status: Obsolete.
Weitere Produktangebote BFG410W,135
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BFG410W,135 | Hersteller : NXP Semiconductors | RF Bipolar Transistors Single NPN 4.5V 10mA 54mW 50 22GHz |
Produkt ist nicht verfügbar |