Technische Details BF799WE6327 INF
Description: RF TRANSISTOR, NPN, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 280mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 20V, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Frequency - Transition: 800MHz, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Supplier Device Package: SOT-323, Part Status: Active.
Weitere Produktangebote BF799WE6327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BF799W E6327 | Hersteller : INFINEON | SOT323-LK PB-FRE |
auf Bestellung 62495 Stücke: Lieferzeit 21-28 Tag (e) |
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BF799WE6327 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BF799WE6327 - BF799 HIGH LINEARITY SI- AND SIGEC-TRA tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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BF799WE6327 | Hersteller : Infineon Technologies | Trans RF BJT NPN 20V 0.035A 280mW 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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BF799WE6327 | Hersteller : Infineon Technologies |
Description: RF TRANSISTOR, NPN Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: SOT-323 Part Status: Active |
Produkt ist nicht verfügbar |