![BD8200YS_S2_00001 BD8200YS_S2_00001](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2370/3757~TO252~~2.jpg)
BD8200YS_S2_00001 Panjit International Inc.
![BD840YS_SERIES.pdf](/images/adobe-acrobat.png)
Description: DIODE SCHOTTKY 200V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 2795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.41 EUR |
15+ | 1.22 EUR |
100+ | 0.85 EUR |
500+ | 0.71 EUR |
1000+ | 0.6 EUR |
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Technische Details BD8200YS_S2_00001 Panjit International Inc.
Description: DIODE SCHOTTKY 200V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 200 V.
Weitere Produktangebote BD8200YS_S2_00001 nach Preis ab 0.51 EUR bis 1.44 EUR
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BD8200YS_S2_00001 | Hersteller : Panjit |
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auf Bestellung 2702 Stücke: Lieferzeit 10-14 Tag (e) |
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BD8200YS_S2_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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