BD682S onsemi
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, 4A, 10
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
Description: POWER BIPOLAR TRANSISTOR, 4A, 10
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 14 W
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1284+ | 0.44 EUR |
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Produktbewertung abgeben
Technische Details BD682S onsemi
Description: TRANS PNP DARL 100V 4A TO126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 14 W.
Weitere Produktangebote BD682S
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Verfügbarkeit |
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BD682S | Hersteller : onsemi / Fairchild | Darlington Transistors PNP Epitaxial Sil |
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BD682-S |
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BD682S | Hersteller : ONSEMI |
Description: ONSEMI - BD682S - Darlington-Transistor, PNP, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Transistormontage: Durchsteckmontage Anzahl der Pins: 3Pin(s) Wandlerpolarität: PNP euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Betriebstemperatur, max.: 150°C usEccn: EAR99 Produktpalette: - SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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BD682S | Hersteller : ON Semiconductor | Trans Darlington PNP 100V 4A 14000mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
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BD682S | Hersteller : onsemi |
Description: TRANS PNP DARL 100V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 14 W |
Produkt ist nicht verfügbar |