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BD239ATU ON Semiconductor / Fairchild
auf Bestellung 557 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details BD239ATU ON Semiconductor / Fairchild
Description: TRANS NPN 60V 2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A, Current - Collector Cutoff (Max): 300µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 30 W.
Weitere Produktangebote BD239ATU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BD239ATU | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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BD239ATU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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BD239ATU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 30 W |
Produkt ist nicht verfügbar |