BCX53-16/DG/B3115 NXP
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Description: NXP - BCX53-16/DG/B3115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 52000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BCX53-16/DG/B3115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 145MHz, Supplier Device Package: SOT-89, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW.
Weitere Produktangebote BCX53-16/DG/B3115
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BCX53-16/DG/B3115 | Hersteller : NXP USA Inc. |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: SOT-89 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
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