BCW60DE6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 144000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
48000+ | 0.068 EUR |
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Technische Details BCW60DE6327HTSA1 Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT23, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 330 mW.
Weitere Produktangebote BCW60DE6327HTSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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BCW60DE6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT NPN 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BCW60DE6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BCW60DE6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BCW60DE6327HTSA1 | Hersteller : Infineon Technologies | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
Produkt ist nicht verfügbar |