BCR553E6327HTSA1 Infineon Technologies
auf Bestellung 12847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
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Technische Details BCR553E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote BCR553E6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BCR553E6327HTSA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - BCR553E6327HTSA1 - BCR553 - PNP SILICON DIGITAL TRANSISTORtariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 967990 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR553E6327HTSA1 | Hersteller : Infineon Technologies |
Trans Digital BJT PNP 50V 500mA 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BCR553E6327HTSA1 | Hersteller : Infineon Technologies |
Trans Digital BJT PNP 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BCR553E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Type of transistor: PNP Collector current: 0.5A Collector-emitter voltage: 50V Frequency: 150MHz Case: SOT23 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BCR553E6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
Produkt ist nicht verfügbar |
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BCR553E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Type of transistor: PNP Collector current: 0.5A Collector-emitter voltage: 50V Frequency: 150MHz Case: SOT23 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |