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BCR196WH6327XTSA1

BCR196WH6327XTSA1 Infineon Technologies


bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 489000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6571+0.082 EUR
Mindestbestellmenge: 6571
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Technische Details BCR196WH6327XTSA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Supplier Device Package: PG-SOT323, Current - Collector (Ic) (Max): 70 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 22 kOhms.

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BCR196WH6327XTSA1 BCR196WH6327XTSA1 Hersteller : Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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BCR196WH6327XTSA1 Hersteller : Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS
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