BCR166E6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT23
Frequency: 160MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT23
Frequency: 160MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP
auf Bestellung 1527 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
167+ | 0.43 EUR |
264+ | 0.27 EUR |
342+ | 0.21 EUR |
439+ | 0.16 EUR |
599+ | 0.12 EUR |
1527+ | 0.047 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR166E6327 INFINEON TECHNOLOGIES
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-11, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 160 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote BCR166E6327 nach Preis ab 0.047 EUR bis 0.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BCR166E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Case: SOT23 Frequency: 160MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1527 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR 166 E6327 | Hersteller : Infineon |
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Description: ROCHESTER ELECTRONICS - BCR166 - BCR166 - DIGITAL TRANSISTOR tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
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BCR166 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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BCR166E6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 160 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |