BCR158WE6327 Infineon Technologies
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Technische Details BCR158WE6327 Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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BCR158WE6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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