BCM856SH6778XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans GP BJT PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Trans GP BJT PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
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Technische Details BCM856SH6778XTSA1 Infineon Technologies
Description: TRANS 2PNP 65V 0.1A SOT363-6, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT363-PO, Part Status: Not For New Designs.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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BCM856SH6778XTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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BCM856SH6778XTSA1 | Hersteller : Infineon Technologies |
Description: TRANS 2PNP 65V 0.1A SOT363-6 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT363-PO Part Status: Not For New Designs |
Produkt ist nicht verfügbar |