BC859BW,115 NEXPERIA
Hersteller: NEXPERIADescription: NEXPERIA - BC859BW,115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 242950 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BC859BW,115 NEXPERIA
Description: TRANS PNP 30V 0.1A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-323, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 200 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC859BW,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BC859BW,115 | Hersteller : Nexperia |
Trans GP BJT PNP 30V 0.1A 200mW 3-Pin SC-70 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BC859BW,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 30V 0.1A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BC859BW,115 | Hersteller : Nexperia |
Bipolar Transistors - BJT BC859BW/SOT323/SC-70 |
Produkt ist nicht verfügbar |