auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.048 EUR |
| 10000+ | 0.042 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC857QASZ Nexperia
Description: TRANS 2PNP 45V 0.1A DFN1010B-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1010B-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BC857QASZ nach Preis ab 0.042 EUR bis 0.51 EUR
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BC857QASZ | Hersteller : Nexperia |
 Trans GP BJT PNP 45V 0.1A 350mW 6-Pin DFN-B EP T/R |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857QASZ | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 45V 0.1A DFN1010B-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010B-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 125000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857QASZ | Hersteller : Nexperia USA Inc. |
Description: TRANS 2PNP 45V 0.1A DFN1010B-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010B-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 127675 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857QASZ | Hersteller : Nexperia |
Bipolar Transistors - BJT BC857QAS/SOT1216/DFN1010B-6 |
auf Bestellung 140156 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857QASZ | Hersteller : NEXPERIA |
Trans GP BJT PNP 45V 0.1A 350mW Automotive 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |
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BC857QASZ | Hersteller : Nexperia |
Trans GP BJT PNP 45V 0.1A 350mW 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |