BC857CMB,315 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: NEXPERIA BC857CMB - SMALL SIGNAL
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: NEXPERIA BC857CMB - SMALL SIGNAL
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 178685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12652+ | 0.033 EUR |
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Technische Details BC857CMB,315 NXP Semiconductors
Description: NEXPERIA BC857CMB - SMALL SIGNAL, Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC857CMB,315 nach Preis ab 0.046 EUR bis 0.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BC857CMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1006B-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1006B-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
auf Bestellung 13300 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CMB,315 | Hersteller : Nexperia | Bipolar Transistors - BJT BC857CMB/SOT883B/XQFN3 |
auf Bestellung 12945 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CMB,315 | Hersteller : NXP |
Description: NXP - BC857CMB,315 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 178685 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CMB,315 | Hersteller : NEXPERIA | Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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BC857CMB,315 | Hersteller : Nexperia | Trans GP BJT PNP 45V 0.1A 250mW 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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BC857CMB,315 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: DFN1006B-3; SOT883B Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BC857CMB,315 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: DFN1006B-3; SOT883B Current gain: 420...800 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |