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BC856BQB-QZ

BC856BQB-QZ Nexperia

BC856XQB_Q_SER-2721657.pdf Hersteller: Nexperia
Bipolar Transistors - BJT BC856BQB-Q/SOT8015/DFN1110D-3
auf Bestellung 4019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.39 EUR
11+ 0.27 EUR
100+ 0.11 EUR
1000+ 0.067 EUR
5000+ 0.06 EUR
10000+ 0.049 EUR
25000+ 0.048 EUR
Mindestbestellmenge: 8
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Technische Details BC856BQB-QZ Nexperia

Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW, Qualification: AEC-Q101.

Weitere Produktangebote BC856BQB-QZ nach Preis ab 0.044 EUR bis 0.39 EUR

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Preis ohne MwSt
BC856BQB-QZ Hersteller : Nexperia USA Inc. BC856XQB-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.06 EUR
10000+ 0.05 EUR
25000+ 0.049 EUR
50000+ 0.044 EUR
Mindestbestellmenge: 5000
BC856BQB-QZ Hersteller : Nexperia USA Inc. BC856XQB-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Qualification: AEC-Q101
auf Bestellung 84549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
67+ 0.26 EUR
137+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.065 EUR
Mindestbestellmenge: 46
BC856BQB-QZ BC856BQB-QZ Hersteller : Nexperia bc856xqb-q_ser.pdf Trans GP BJT PNP 65V 0.1A 420mW Automotive AEC-Q101 3-Pin DFN-D T/R
Produkt ist nicht verfügbar
BC856BQB-QZ Hersteller : NEXPERIA bc856xqb-q_ser.pdf BC856BQB-Q/SOT8015/DFN1110D-3
Produkt ist nicht verfügbar