BC856BDW1T3G ON Semiconductor
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.04 EUR |
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Technische Details BC856BDW1T3G ON Semiconductor
Description: TRANS 2PNP 65V 0.1A SC88/SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 380mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote BC856BDW1T3G nach Preis ab 0.04 EUR bis 0.37 EUR
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BC856BDW1T3G | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC856BDW1T3G | Hersteller : onsemi |
Description: TRANS 2PNP 65V 0.1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC856BDW1T3G | Hersteller : onsemi |
Bipolar Transistors - BJT 100mA 80V Dual PNP |
auf Bestellung 56159 Stücke: Lieferzeit 10-14 Tag (e) |
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BC856BDW1T3G | Hersteller : onsemi |
Description: TRANS 2PNP 65V 0.1A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 15588 Stücke: Lieferzeit 10-14 Tag (e) |
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BC856BDW1T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 65V 0.2A 380mW 6-Pin SC-88 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC856BDW1T3G | Hersteller : ONSEMI |
Description: ONSEMI - BC856BDW1T3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 720798 Stücke: Lieferzeit 14-21 Tag (e) |
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BC856BDW1T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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BC856BDW1T3G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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BC856BDW1T3G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |