BC849A Diotec Semiconductor
auf Bestellung 5120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2482+ | 0.062 EUR |
| 3000+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC849A Diotec Semiconductor
Description: BJT SOT23 30V 100MA NPN 0.25W, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 250 mW.
Weitere Produktangebote BC849A nach Preis ab 0.014 EUR bis 0.2 EUR
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BC849A | Hersteller : Diotec Semiconductor |
 Bipolar Transistors - BJT BJT, SOT-23, 30V, 100mA, NPN |
auf Bestellung 8099 Stücke: Lieferzeit 10-14 Tag (e) |
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BC849A | Hersteller : DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 250mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Pulsed collector current: 0.2A Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5120 Stücke: Lieferzeit 7-14 Tag (e) |
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BC849A | Hersteller : DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 250mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Pulsed collector current: 0.2A Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 5120 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC849A | Hersteller : Diotec Semiconductor |
Description: BJT SOT23 30V 100MA NPN 0.25W Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC849A | Hersteller : Diotec Semiconductor |
Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BC849A | Hersteller : Diotec Semiconductor |
Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BC849A | Hersteller : Diotec Semiconductor |
Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| BC849A | Hersteller : Diotec Semiconductor |
Description: BJT SOT23 30V 100MA NPN 0.25W Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |