auf Bestellung 18470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5264+ | 0.029 EUR |
| 5348+ | 0.028 EUR |
| 5406+ | 0.027 EUR |
| 5465+ | 0.025 EUR |
| 6000+ | 0.024 EUR |
| 15000+ | 0.023 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC847RAZ Nexperia
Description: BC847RA/SOT1268/DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C, Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q100.
Weitere Produktangebote BC847RAZ nach Preis ab 0.022 EUR bis 0.52 EUR
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BC847RAZ | Hersteller : Nexperia |
 Trans GP BJT NPN 45V 0.1A 480mW 6-Pin DFN EP T/R |
auf Bestellung 18470 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847RAZ | Hersteller : Nexperia USA Inc. |
Description: BC847RA/SOT1268/DFN1412-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847RAZ | Hersteller : Nexperia USA Inc. |
Description: BC847RA/SOT1268/DFN1412-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847RAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT BC847RA/SOT1268/DFN1412-6 |
auf Bestellung 4159 Stücke: Lieferzeit 10-14 Tag (e) |
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BC847RAZ | Hersteller : NEXPERIA |
Trans GP BJT NPN 45V 0.1A 480mW Automotive 6-Pin DFN EP T/R |
Produkt ist nicht verfügbar |