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BC846BQB-QZ Nexperia USA Inc.


BC846XQB-Q_SER.pdf Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4660 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
66+ 0.27 EUR
135+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
2000+ 0.066 EUR
Mindestbestellmenge: 46
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Technische Details BC846BQB-QZ Nexperia USA Inc.

Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 340 mW, Grade: Automotive, Qualification: AEC-Q101.

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BC846BQB-QZ BC846BQB-QZ Hersteller : Nexperia bc846xqb-q_ser.pdf Trans GP BJT NPN 65V 0.1A 420mW Automotive AEC-Q101 3-Pin DFN-D T/R
Produkt ist nicht verfügbar
BC846BQB-QZ Hersteller : Nexperia USA Inc. BC846XQB-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 340 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BC846BQB-QZ BC846BQB-QZ Hersteller : Nexperia BC846XQB_Q_SER-2721678.pdf Bipolar Transistors - BJT BC846BQB-Q/SOT8015/DFN1110D-3
Produkt ist nicht verfügbar