Technische Details BC517-D27Z ON Semiconductor
Description: TRANS NPN DARL 30V 1.2A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1.2 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 625 mW.
Weitere Produktangebote BC517-D27Z
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BC517_D27Z | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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