BC856S E6327 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - BC856S E6327 - BC856 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BC856S E6327 ROCHESTER ELECTRONICS
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote BC856S E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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BC 856S E6327 | Hersteller : Infineon Technologies |
Trans GP BJT PNP 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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| BC856S E6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |