BAW56S/SG115 NXP
Hersteller: NXPDescription: NXP - BAW56S/SG115 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2574000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BAW56S/SG115 NXP
Description: DIODE, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 215mA, Supplier Device Package: SOT23-3 (TO-236), Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.
Weitere Produktangebote BAW56S/SG115
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BAW56S/SG115 | Hersteller : NXP USA Inc. |
Description: DIODE Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT23-3 (TO-236) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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