BAW156E6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE ARRAY GP 80V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
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Technische Details BAW156E6327HTSA1 Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200mA (DC), Supplier Device Package: PG-SOT23, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.
Weitere Produktangebote BAW156E6327HTSA1 nach Preis ab 0.13 EUR bis 0.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAW156E6327HTSA1 | Hersteller : Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 µs Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 5447 Stücke: Lieferzeit 10-14 Tag (e) |
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BAW156E6327HTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BAW156E6327HTSA1 - BAW156 - LOW LEAKAGE DIODE euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 28644 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW156E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Power dissipation: 0.25W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BAW156E6327HTSA1 | Hersteller : Infineon Technologies | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode |
Produkt ist nicht verfügbar |
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BAW156E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Power dissipation: 0.25W Kind of package: reel; tape |
Produkt ist nicht verfügbar |