BAV20143 NXP
Hersteller: NXPDescription: NXP - BAV20143 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BAV20143 NXP
Description: NOW NEXPERIA BAV20 - RECTIFIER D, Packaging: Bulk, Part Status: Active, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: ALF2, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 150 V.
Weitere Produktangebote BAV20143
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BAV20143 | Hersteller : NXP USA Inc. |
Description: NOW NEXPERIA BAV20 - RECTIFIER D Packaging: Bulk Part Status: Active Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ALF2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
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