BAT54AW/6115 NXP
Hersteller: NXPDescription: NXP - BAT54AW/6115 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 81000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BAT54AW/6115 NXP
Description: DIODE ARR SCHOT 30V 200MA SOT323, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200mA (DC), Supplier Device Package: SOT-323, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 µA @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BAT54AW/6115
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BAT54AW/6115 | Hersteller : NXP USA Inc. |
Description: DIODE ARR SCHOT 30V 200MA SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
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