BAS521LPQ-7B Diodes Incorporated
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Technische Details BAS521LPQ-7B Diodes Incorporated
Description: DIODE GEN PURP 325V 400MA 2DFN, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 400mA, Supplier Device Package: X1-DFN1006-2, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 325 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA, Current - Reverse Leakage @ Vr: 150 nA @ 250 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS521LPQ-7B
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BAS521LPQ-7B | Hersteller : Diodes Inc |
 Rectifier Diode Small Signal Switching 325V 0.4A 50ns Automotive 2-Pin X1-DFN T/R |
Produkt ist nicht verfügbar |
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BAS521LPQ-7B | Hersteller : Diodes Incorporated |
Description: DIODE GEN PURP 325V 400MA 2DFN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 400mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 325 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 150 nA @ 250 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |