![BAS32L,135 BAS32L,135](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4843/568_568-LLDS%28SOD80C%29.jpg)
BAS32L,135 Nexperia USA Inc.
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Description: DIODE GEN PURP 75V 200MA LLDS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: LLDS; MiniMelf
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.023 EUR |
30000+ | 0.022 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS32L,135 Nexperia USA Inc.
Description: DIODE GEN PURP 75V 200MA LLDS, Packaging: Tape & Reel (TR), Package / Case: DO-213AC, MINI-MELF, SOD-80, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: LLDS; MiniMelf, Operating Temperature - Junction: 200°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V.
Weitere Produktangebote BAS32L,135 nach Preis ab 0.016 EUR bis 0.25 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS32L,135 | Hersteller : Nexperia |
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auf Bestellung 109750 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS32L,135 | Hersteller : Nexperia |
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auf Bestellung 109750 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS32L,135 | Hersteller : NXP Semiconductors |
![]() Packaging: Bulk Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: LLDS; MiniMelf Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 635088 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS32L,135 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: LLDS; MiniMelf Operating Temperature - Junction: 200°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 48578 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS32L,135 | Hersteller : Nexperia |
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auf Bestellung 23759 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS32L,135 | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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BAS32L,135 | Hersteller : NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD80C Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 0.1mA Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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BAS32L,135 | Hersteller : NEXPERIA |
![]() SVHC: No SVHC (17-Jan-2022) |
Produkt ist nicht verfügbar |
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BAS32L,135 | Hersteller : NEXPERIA |
![]() Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD80C; Ufmax: 1V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD80C Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 0.1mA Power dissipation: 0.5W Kind of package: reel; tape |
Produkt ist nicht verfügbar |