BAL 74 E6327 Infineon Technologies
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Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
auf Bestellung 3026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 0.54 EUR |
10+ | 0.37 EUR |
100+ | 0.18 EUR |
1000+ | 0.11 EUR |
3000+ | 0.092 EUR |
9000+ | 0.07 EUR |
24000+ | 0.069 EUR |
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Technische Details BAL 74 E6327 Infineon Technologies
Description: DIODE GEN PURP 50V 250MA SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: PG-SOT23, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.
Weitere Produktangebote BAL 74 E6327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BAL74E6327 | Hersteller : TI |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BAL74E6327 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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