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B2D08065KS BASiC SEMICONDUCTOR
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Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 37W; TO220ISO; tube
Kind of package: tube
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 64A
Leakage current: 10µA
Power dissipation: 37W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220ISO
Max. off-state voltage: 650V
Max. forward voltage: 1.54V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
35+ | 2.07 EUR |
45+ | 1.59 EUR |
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Technische Details B2D08065KS BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 37W; TO220ISO; tube, Kind of package: tube, Load current: 8A, Semiconductor structure: single diode, Max. forward impulse current: 64A, Leakage current: 10µA, Power dissipation: 37W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Case: TO220ISO, Max. off-state voltage: 650V, Max. forward voltage: 1.54V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote B2D08065KS nach Preis ab 1.59 EUR bis 2.3 EUR
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B2D08065KS | Hersteller : BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 37W; TO220ISO; tube Kind of package: tube Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 64A Leakage current: 10µA Power dissipation: 37W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220ISO Max. off-state voltage: 650V Max. forward voltage: 1.54V |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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