AUIRGU4045D

AUIRGU4045D Infineon Technologies


auirgr4045d-1225340.pdf Hersteller: Infineon Technologies
IGBT Transistors DISCRETES
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Technische Details AUIRGU4045D Infineon Technologies

Description: DIODE 600V IGBT, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: I-PAK, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/75ns, Switching Energy: 56µJ (on), 122µJ (off), Test Condition: 400V, 6A, 47Ohm, 15V, Gate Charge: 19.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 77 W.

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AUIRGU4045D AUIRGU4045D Hersteller : Infineon Technologies auirgr4045d.pdf Trans IGBT Chip N-CH 600V 12A 77W Automotive AEC-Q101 3-Pin(3+Tab) IPAK Tube
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AUIRGU4045D AUIRGU4045D Hersteller : Infineon Technologies auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f Description: DIODE 600V IGBT
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: I-PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar