AUIRFZ46NL Infineon Technologies
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 4.03 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.66 EUR |
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Technische Details AUIRFZ46NL Infineon Technologies
Description: MOSFET N-CH 55V 39A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V, Power Dissipation (Max): 3.8W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V.
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AUIRFZ46NL | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 53A Automotive 3-Pin(3+Tab) TO-262 Tube |
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AUIRFZ46NL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 39A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V |
Produkt ist nicht verfügbar |