AUIRFR8403TRLARMA1 Infineon Technologies
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Technische Details AUIRFR8403TRLARMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V, Power Dissipation (Max): 99W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: PG-TO252-3-901|DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V.
Weitere Produktangebote AUIRFR8403TRLARMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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AUIRFR8403TRLARMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: PG-TO252-3-901|DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V |
Produkt ist nicht verfügbar |
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AUIRFR8403TRLARMA1 | Hersteller : Infineon Technologies | MOSFETs MOSFET_(20V 40V) |
Produkt ist nicht verfügbar |