AUIRFR4615TRL Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 150V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.22 EUR |
| 6000+ | 2.11 EUR |
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Technische Details AUIRFR4615TRL Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V.
Weitere Produktangebote AUIRFR4615TRL nach Preis ab 2.11 EUR bis 5.19 EUR
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AUIRFR4615TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 150V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR4615TRL | Hersteller : Infineon Technologies |
MOSFETs AUTO 150V 1 N-CH HEXFET 42mOhms |
auf Bestellung 3495 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFR4615TRL | Hersteller : Infineon |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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AUIRFR4615TRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 33A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
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