AUIRFN8458TR

AUIRFN8458TR Infineon Technologies


Infineon_AUIRFN8458_DataSheet_v01_00_EN-3360495.pdf Hersteller: Infineon Technologies
MOSFET 40V Dual N Channel HEXFET
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1+3.98 EUR
10+ 3.31 EUR
100+ 2.64 EUR
250+ 2.43 EUR
500+ 2.2 EUR
1000+ 1.88 EUR
2500+ 1.78 EUR
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Technische Details AUIRFN8458TR Infineon Technologies

Description: MOSFET 2N-CH 40V 43A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 25µA, Supplier Device Package: PQFN (5x6).

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AUIRFN8458TR AUIRFN8458TR Hersteller : Infineon Technologies 3310auirfn8458.pdf Trans MOSFET N-CH Si 40V 43A Automotive 8-Pin QFN EP T/R
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AUIRFN8458TR AUIRFN8458TR Hersteller : Infineon Technologies AUIRFN8458.pdf Description: MOSFET 2N-CH 40V 43A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar
AUIRFN8458TR AUIRFN8458TR Hersteller : Infineon Technologies AUIRFN8458.pdf Description: MOSFET 2N-CH 40V 43A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Supplier Device Package: PQFN (5x6)
Produkt ist nicht verfügbar