AUIRF7319Q Infineon Technologies
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Technische Details AUIRF7319Q Infineon Technologies
Description: MOSFET N/P-CH 30V 6.5A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
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AUIRF7319Q | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 6.5A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |