AUIRF7309Q

AUIRF7309Q Infineon Technologies


1295auirf7309q.pdf Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details AUIRF7309Q Infineon Technologies

Description: MOSFET N/P-CH 30V 4A/3A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

Weitere Produktangebote AUIRF7309Q

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
AUIRF7309Q AUIRF7309Q Hersteller : Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar